N-Channel RDS(ON),typ.= 30mΩ@VGS=10V RDS(ON),typ.= 36mΩ@VGS=4.5V
P-Channel RDS(ON),typ.=70 mΩ@VGS=-10V RDS(ON),typ.=100 mΩ@VGS=-4.5V
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
TYPICAL APPLICATION
N−Channel / P−Channel
Pin# 1 2 3 4 5 .